產(chǎn)品分類
MPCVD設(shè)備
所屬分類:
第三代半導(dǎo)體工藝設(shè)備
概要:
? 微波等離子化學(xué)氣相沉積技術(shù)(MPCVD) , 通過等離子增加前驅(qū)體的反應(yīng)速率,降低反應(yīng)溫度。適合制備面積大、均勻性好、純度高、結(jié)晶形態(tài)好的高質(zhì)量的金剛石單晶和多晶薄膜
關(guān)鍵詞:
MPCVD
MPCVD設(shè)備
產(chǎn)品概述/Product Introduction:
♦ 微波等離子化學(xué)氣相沉積技術(shù)(MPCVD) , 通過等離子增加前驅(qū)體的反應(yīng)速率,降低反應(yīng)溫度。適合制備面積大、均勻性好、純度高、結(jié)晶形態(tài)好的高質(zhì)量的金剛石單晶和多晶薄膜
Microwave plasma chemical vapor deposition (MPCVD), which increases the reaction rate of precur-sors and reduces the reaction temperature by plasma. It is suitable for preparing diamond single crystal and polycrystalline films with large area, good uniformity, high purity and good crystal morphology
技術(shù)指標/Technical Indicators:
測溫: 300-1500°C Temperature measurement: 300-1500°C |
極限真空: 5*10E-4Pa Limit vacuum: 5*10E-4Pa |
氣路系統(tǒng): 6路 Gas path system: 6 channels |
壓力范圍: 5-300Torr Pressure range: 5-300Torr |
微波功率: 0.5-15Kw連續(xù)可調(diào) Microwave power: 0.5-15Kw continuously adjustable |
功率穩(wěn)定性: <2% Power stability: < 2% |
波紋:≤1% Ripple:≤1% |
微波頻率: 2450MHz士50MHz Microwave frequency: 2450MHz土50MHz |
微波泄露值: <5Mw/cm² Microwave leakage value: < 5Mw/cm² |
放電區(qū)域:≥100mm Discharge area:≥100mm |
沉積區(qū)域:≥80mm Sedimentation area:≥80 mm |
生長速率: >12um Growth rate: > 12um |
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