PECVD 臥式
所屬分類:
第一代半導體工藝設備
概要:
? PECVD主要應用于氧化硅(SiO?) 和氮化硅(SiN4) 材料的薄膜生長,工作原理是在低壓引入高頻射頻電源,采取電容耦合方式使工藝氣體電離放電,形成等離子體狀態(tài),產生大量的活性基團,這些活性基團在襯底材料表面發(fā)生化學反應并沉積到襯底表面,生長出氧化硅(SiO?) 或氮化硅(SiN4) 薄膜
關鍵詞:
PECVD (立式/臥式)
PECVD 臥式
產品概述/Product Introduction:
♦ PECVD主要應用于氧化硅(SiO?) 和氮化硅(SiN4) 材料的薄膜生長,工作原理是在低壓引入高頻射頻電源,采取電容耦合方式使工藝氣體電離放電,形成等離子體狀態(tài),產生大量的活性基團,這些活性基團在襯底材料表面發(fā)生化學反應并沉積到襯底表面,生長出氧化硅(SiO?) 或氮化硅(SiN4) 薄膜
PECVD is mainly used for thin film growth of silicon oxide (SiO?) and silicon nitride (SiN4) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO?) or silicon nitride (SiN4) thin films.
產品特點/Product Characteristics:
♦ 成膜質量高
High film quality
♦ 體積小占地面積小,操作簡便
Small volume, small floor area and simple operation
♦ 具有良好的工藝性能,使用范圍廣泛
Has good process performance and wide application range
技術指標/Technical Indicators:
晶片尺寸:最大8英寸 Wafer size: Max. 8 inches |
溫度:50°C-900°C Temperature: 50°C-900°C |
真空系統(tǒng):干泵+分子泵 Vacuum system: dry pump + molecular pump |
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應用范圍/Scope:
♦ 應用于半導體器件、電力電子器件、光電子等行業(yè)氧化硅(SiO?) 或氮化硅(SiO?) 薄膜的制備
It can be used to prepare silicon oxide (SiO?) or silicon nitride (SiO?) thin films in semiconductor de- vices, power electronic devices, optoelectronics and other industries
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