LPCVD立式爐管設(shè)備

所屬分類：

CVD設(shè)備

概要：

半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于POLY, D-POLY, SiN,LP-TEOS；立式LPCVD采用鐘罩式結(jié)構(gòu)，設(shè)計(jì)嵌套腔體機(jī)械手傳片組件、舟旋轉(zhuǎn)組件，具有占地面積小、成膜均勻性高、工藝穩(wěn)定性高等優(yōu)點(diǎn)。

關(guān)鍵詞：

LPCVD立式爐管設(shè)備

LPCVD立式爐管設(shè)備

產(chǎn)品概述/Product Introduction：

♦ 半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于POLY, D-POLY, SiN,LP-TEOS。

LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing,which is mainly used for the growth of LP-POLY,LP-DPOLY,LP-SiN，LP-TEOS thin films.

♦ 立式LPCVD采用鐘罩式結(jié)構(gòu)，設(shè)計(jì)嵌套腔體機(jī)械手傳片組件、舟旋轉(zhuǎn)組件，具有占地面積小、成膜均勻性高、工藝穩(wěn)定性高等優(yōu)點(diǎn)。

Vertical LPCVD adopts bell jar structure, and designs nested cavity manipulator film transmission assembly and boat rotation assembly, which has the advantages of small occupied area, high film formation uniformity and high process stability.

產(chǎn)品特點(diǎn)/Product Characteristics：

♦ 全自動(dòng)傳送，定位精準(zhǔn)，穩(wěn)定可靠

Fully automatic transmission, accurate positioning, stability and reliabilityt

♦ 高潔凈度工藝環(huán)境，有效控制污染

High cleanliness process environment, effective pollution control

技術(shù)指標(biāo)/Technical Indicators：

♦ 晶片尺寸：6/8/12英寸 Wafer size: 6/8/12 inches

♦ 制程溫度范圍：300°C-1000°C Process temperature range: 300°C-1000°C

♦ 批次片數(shù): 100-150片 Batch capacity: 100-150 pcs

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LPCVD臥式爐管設(shè)備